[23a-P11-1~18] 13.8 Optical properties and light-emitting devices

[23a-P11-18] Evaluation of valence band difference (ΔE_v) at Si/CaF₂ interface using p-type single barrier tunneling diodes

〇Daiki Sugawara¹, Long Liu¹, Gensai Tei¹, Yohei Koyanagi¹, Kenta Kitamura¹, Masahiro Watanabe¹ (1.Tokyo Tech)

Keywords:Quantum Cascade Laser, Resonant tunnering diode, Quantum devices

Simulations were performed on the current-voltage characteristics of a p-type single barrier tunneling diode, taking into account the effects of leakage current and parasitic resistance, which are important for the extraction of the tunneling current.The band discontinuity at the interface between diatomic layer CaF₂ and Si was experimentally estimated to be 2.0 eV.