13:00 〜 14:40
▲ [23p-P02-3] The On-Site Nanowire-Shape Graphene Formation for Silicon Nanowire-Based Schottky Junction Solar Cells
キーワード：silicon nanowires, graphene, Schottky junction solar cell
The Schottky junction formed by contacting an n-type semiconductor with a sufficiently high work function conductor has been explored over the years for use as a simple photovoltaic cell. The interface has rectifying diode properties and it can easily be made through various semiconductor-conductor combinations. Graphene (Gr) has been used as an alternative for the conductor material because of its relatively good electrical properties for thin and highly transparent material. Many efforts reported the doping Gr to improve its conductivity and work function, and the engineering at the interface with a passivation layer to improve the power conversion efficiency (PCE) but they have not reached levels necessary for practical use so far. In this study, the on-site growth method for forming the on-site NW-shaped Gr on a SiNW array was hypothesized to serve as an advantageous method of producing Schottky junction solar cells which can improve light trapping close to the junction compared to a planar device without sacrificing carrier collection. The Gr growth process was modified for fabricating functional solar cell devices, and samples were tested for their photovoltaic properties compared to equivalent planar controls.