[23p-P06-1~4] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[23p-P06-2] The effects of wet etching for polycrystal GaN on Si substrates

〇Yui Ishikawa¹, Shun Koshiba¹, Takashi Kuraoka¹, Hidehumi Akiyama² (1.Kagawa Univ, 2.The Institute for Solid State Physics, the University of Tokyo)

Keywords:GaN