[23p-P07-1~16] 15.4 III-V-group nitride crystals

[23p-P07-12] Correlation between Peak Wavelength and Peak Intensity in Polar/Semi-polar InGaN/GaN Quantum Wells by Micro PL Mapping Measurements

〇Kanata Kawai¹, Kento Ikeda¹, Tetsuya Matsuyama¹, Kenji Wada¹, Narihito Okada², Kazuyuki Tadatomo², Koichi Okamoto¹ (1.Osaka Pref. Univ., 2.Yamaguchi Univ.)

Keywords:surface plasmon, InGaN/GaN, Semi-polar

InGaN/GaN quantum wells (QWs)-based light emitting diode (LEDs) have been used widely, however, the light emission efficiencies drop significantly at green emission wavelengths due to the quantum confined Stark effect (QCSE), but this effect can be reduced for QWs grown on semi-polar GaN substrates such as {11-22} planes.We have reported that surface plasmon (SP) resonance is also promising method to enhance the emission efficiency for InGaN/GaN QWs and other materials. In this study, I examined the correlation between the peak wavelength and the peak intensity by micro PL mapping measurements in detail, and discussed the emission mechanism.