[23p-P07-1~16] 15.4 III-V-group nitride crystals

[23p-P07-13] Cathodoluminescence intensity profile at dark spot in AlGaN epilayers with various Al composition

〇Satoshi Kurai¹, Shun Hirayama¹, Jin Li¹, Fumiya Nakatani¹, Narihito Okada¹, Hideto Miyake^2,3, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.Grad. Sch. of Eng., Mie Univ., 3.Grad Sch. of Regional Innovation Studies, Mie Univ.)

Keywords:AlGaN, defect, cathodoluminescence