[23p-P07-1~16] 15.4 III-V-group nitride crystals

[23p-P07-4] Effect of growth temperature on crystal orientation of GaN growth on graphene/r-plane sapphire substrate

〇Kazuki Niwa¹, Masami Nonogaki¹, Yukito Kato¹, Yasuhiro Fukunishi¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

Keywords:gallium nitride, remote epitaxy, graphene