[23p-P11-1~25] 17 Nanocarbon Technology(Poster)

[23p-P11-11] Van der Waals Epitaxy of Indium Nitride on Suspended Graphene

〇Yuta Kawase¹, Kenta Matsushima¹, Juntaro Doi¹, Tsutomu Araki¹, Shinichiro Mouri¹ (1.Ritsumeikan Univ.)

Keywords:graphene, Van der Waals Epitaxy, Nitride semiconductor

Recently, crystal growth using graphene substrate has been suggested as a way to fabricate transferable compound semiconductor. Moreover, it is suggested that the potential of substrate under graphene affects the crystal growth. Therefore, the platform to study crystal growth on graphene excluded the effect of substrate is necessary to discuss the role of graphene itself. Here, we propose a new approach to study realistic crystal growth on graphene using suspended sample and demonstrated the growth of InN crystals.