[23p-P11-1~25] 17 Nanocarbon Technology(Poster)

[23p-P11-19] Nano ~ sub-nanometer junction structures of two-dimensional semiconductors

〇(M2)Nanami Ichinose¹, Liu Zheng², Takashi Taniguchi³, Kenji Watanabe³, Ryo Kitaura¹ (1.Nagoya Univ., 2.AIST, 3.NIMS)

Keywords:transition metal dichalcogenide, lateral supper structure

In this study, we fabricated 2D lateral heterostructures of WS2/MoS2 with a junction width of several nanometers to sub-nanometers. As a growth method, we used the metalorganic chemical vapor deposition (MOCVD) method and aimed to establish a method that can construct programs to combine blocks of hetero structures. The MOCVD equipment used in this work can rapidly switch the supply of source materials on the order of seconds to realize nanometer-scale 1D stripes. In the presentation, we will give details of the growth process and optical properties of grown heterostructures.