[23p-P11-1~25] 17 Nanocarbon Technology(Poster)

[23p-P11-9] Examination of hBN growth method on Si substrate by thermal CVD method using Ni

〇Takara Okonai¹, Yoshitaka Nakamura¹, Takaharu Kamada¹, Toshiyuki Kakudate¹ (1.NIT, Hachinohe Col.)

Keywords:hexagonal boron nitride, h-BN

When Si or c-plane sapphire is used as a substrate material for synthesizing h-BN by thermal CVD, the grain size of the h-BN synthesized is not large because it does not use the catalytic effect of metal. Therefore, we thought that the grain size of h-BN synthesized on Si could be increased by placing a metal catalyst on a part of the substrate when synthesizing h-BN directly on Si. So, we tried to synthesize h-BN by thermal CVD using a sample that covered the surface of Si with Ni foil with holes drilled in it.