Fabrication of β-Ga<sub>2</sub>O<sub>3 </sub>nanowires by direct synthesis method

Yuya Hino; Katsushi Nishino

Presentation information

Poster presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

[23p-P12-1~11] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

Thu. Sep 23, 2021 3:00 PM - 4:40 PM P12 (Poster)

3:00 PM - 4:40 PM

[23p-P12-11] Fabrication of β-Ga₂O₃nanowires by direct synthesis method

〇Yuya Hino¹, Katsushi Nishino¹ (1.Tokushima Univ.)

Keywords:Ga2O3, nanowire

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Presentation information

[23p-P12-1~11] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

[23p-P12-11] Fabrication of β-Ga2O3 nanowires by direct synthesis method

[23p-P12-11] Fabrication of β-Ga₂O₃nanowires by direct synthesis method