Takahiro Sawada

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Speaker, Author, Co-Author

Fri. Mar 19, 2021 1:00 PM - 4:45 PM Z25 (Z25)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19p-Z25-1~14] 13.7 Compound and power electron devices and process technology

3:30 PM - 3:45 PM

△ [19p-Z25-10] Atomic Layer Selective GaN/SiN Etching by HBr Neutral Beam

〇(M1)Takahiro Sawada¹, Daisuke Ohori¹, Kenta Sugawara³, Masaya Okada³, Ken Nakata³, Kazutaka Inoue³, Daisuke Sato⁴, Seiji Samukawa^1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.Sumitomo Electric Industries, Ltd, 4.SHOWA DENKO K.K.)

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