[16p-P02-1~4] 15.5 Group IV crystals and alloys

Tue. Mar 16, 2021 1:00 PM - 1:50 PM P02 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:50 PM

[16p-P02-1] Laser-induced Liquid-phase Crystallization of GeSn Alloy on Quartz Substrate

〇Mizuki Kuniyoshi^1,2, Naoto Tabuchi², Takuji Hosoi², Takayoshi Shimura², Heiji Watanabe² (1.ULVAC, Inc., 2.Osaka Univ.)

1:00 PM - 1:50 PM

[16p-P02-2] Effects of uniaxial strain direction on luminescence properties for strained Ge microbridges structures

〇(M1)Takahiro Inoue¹, Youya Wagatsuma¹, Kodai Yamada¹, Kentarou Sawano¹ (1.Adv.Res.Lab., Tokyo City Univ)

1:00 PM - 1:50 PM

[16p-P02-3] Room temperature EL from strained Ge-on-Si(111) diode structure

〇Yuwa Sugiura¹, Youya Wagatsuma¹, Koudai Yamada¹, Yusuke Hoshi¹, Michihiro Yamada², Kohei Hamaya², Kentarou Sawano¹ (1.Adv. Res. Lab., Tokyo City Univ., 2.CSRN, Osaka Univ.)

1:00 PM - 1:50 PM

[16p-P02-4] Suppression of the crack formation in strained SiGe by using Ge-on-Si instead of Ge substrates

〇Youya Wagatsuma¹, Md. Mahfuz Alam^1,2, Kazuya Okada¹, Michihiro Yamada³, Kohei Hamaya³, Kentarou Sawano¹ (1.Adv. Res. Lab., Tokyo City Univ., 2.Univ. of Barishal, 3.CSRN, Osaka Univ.)

Session information

[16p-P02-1~4] 15.5 Group IV crystals and alloys

[16p-P02-1] Laser-induced Liquid-phase Crystallization of GeSn Alloy on Quartz Substrate

[16p-P02-2] Effects of uniaxial strain direction on luminescence properties for strained Ge microbridges structures

[16p-P02-3] Room temperature EL from strained Ge-on-Si(111) diode structure

[16p-P02-4] Suppression of the crack formation in strained SiGe by using Ge-on-Si instead of Ge substrates

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