Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[16p-Z23-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Mar 16, 2021 1:30 PM - 4:15 PM Z23 (Z23)

Takashi Suemasu(Univ. of Tsukuba), Kosuke Hara(Univ. of Yamanashi)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[16p-Z23-1] Low temperature epitaxial growth of topological insulator Bi₂Se₃ and their electrical properties

〇Takamu Nozaki¹, Tomohiro Kondo¹, Hiroki Ohta², Ken Yonezawa², Yoshikazu Terai¹ (1.Kyushu Inst. of Tech., 2.Kenix Co., Ltd.)

1:45 PM - 2:00 PM

▼ [16p-Z23-2] A New Synthesis Technique for type-II Ge Clathrate Film

〇(D)Rahul Kumar¹, Yuta Hazama¹, Fumitaka Ohashi¹, Himanshu Shekhar Jha¹, Tetsuji Kume¹ (1.Gifu University)

2:00 PM - 2:15 PM

▲ [16p-Z23-3] Synthesis of ternary type II clathrate films using AlGe alloy

〇Tun Naing Aye¹, Rahul Kumar¹, Himanshu shekhar Jha¹, Fumitaka Ohashi¹, Tetsuji Kume¹ (1.Faculty of Engineering, Gifu University)

2:15 PM - 2:30 PM

[16p-Z23-4] CaGe₂ film growth by close-spaced evaporation and transformation to GeH

〇Kosuke Hara¹, Shin Kunieda¹, Junji Yamanaka², Keisuke Arimoto¹, Mai Ito³, Masashi Kurosawa^3,4 (1.CCST, Univ. of Yamanashi, 2.CIA, Univ. of Yamanashi, 3.Grad. Sch. of Eng., Nagoya Univ., 4.IAR, Nagoya Univ.)

2:30 PM - 2:45 PM

[16p-Z23-5] Hydrogen simulation in the pyrite-type sulfide semiconductor FeS₂

〇Hirotaka Okabe¹, Masatoshi Hiraishi¹, Soshi Takeshita^1,2, Akihiro Koda^1,2, Kenji Kojima³, Takeo Ohsawa⁴, Naoki Ohashi⁴, Ryosuke Kadono^1,2 (1.KEK-IMSS, 2.SOKENDAI, 3.TRIUMF, 4.NIMS)

2:45 PM - 3:00 PM

[16p-Z23-6] Optical dynamics prediction by first-principles simulation and AI based inverse design approach for core-shell colloidal quantum dot

〇(B)Hibiki Yoshida¹, Katsuyoshi Sakamoto¹, Kouichi Yamaguti¹, Qing Shen¹, Yoshitaka Okada³, Tomah Sogabe^1,2,3 (1.Univ. of Electro-Comm, 2.Grid inc., 3.The Univ. of Tokyo)

3:15 PM - 3:30 PM

[16p-Z23-7] Carrier lifetime and dark current of Mg₂Si pn-junction diode formed on Mg₂Si substrate by thermal diffusion

〇Naoki Mizunuma¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

3:30 PM - 3:45 PM

[16p-Z23-8] Relationship between Bias-voltage and Photosensitivity of Mg₂Si Photodiodes with a ring-mesh-electrode

〇Yudai Ichikawa¹, Takeru Miyauchi¹, Misa Yoshida², Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

3:45 PM - 4:00 PM

△ [16p-Z23-9] Effect of Zn_1-xGe_xO interlayer on n⁺-AZO/p-BaSi₂ heterojunction solar cells

〇Yudai Yamashita¹, Miho Kitamura², Koji Horiba², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.KEK)

4:00 PM - 4:15 PM

[16p-Z23-10] Photoresponse properties of β-FeSi₂ pn homojunction grown by MBE

〇Ryota Kinoshita¹, Kazuki Yamato¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech)

Session information

[16p-Z23-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

[16p-Z23-1] Low temperature epitaxial growth of topological insulator Bi₂Se₃ and their electrical properties

▼ [16p-Z23-2] A New Synthesis Technique for type-II Ge Clathrate Film

▲ [16p-Z23-3] Synthesis of ternary type II clathrate films using AlGe alloy

[16p-Z23-4] CaGe₂ film growth by close-spaced evaporation and transformation to GeH

[16p-Z23-5] Hydrogen simulation in the pyrite-type sulfide semiconductor FeS₂

[16p-Z23-6] Optical dynamics prediction by first-principles simulation and AI based inverse design approach for core-shell colloidal quantum dot

[16p-Z23-7] Carrier lifetime and dark current of Mg₂Si pn-junction diode formed on Mg₂Si substrate by thermal diffusion

[16p-Z23-8] Relationship between Bias-voltage and Photosensitivity of Mg₂Si Photodiodes with a ring-mesh-electrode

△ [16p-Z23-9] Effect of Zn_1-xGe_xO interlayer on n⁺-AZO/p-BaSi₂ heterojunction solar cells

[16p-Z23-10] Photoresponse properties of β-FeSi₂ pn homojunction grown by MBE

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Session information

[16p-Z23-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

[16p-Z23-1] Low temperature epitaxial growth of topological insulator Bi2Se3 and their electrical properties

▼ [16p-Z23-2] A New Synthesis Technique for type-II Ge Clathrate Film

▲ [16p-Z23-3] Synthesis of ternary type II clathrate films using AlGe alloy

[16p-Z23-4] CaGe2 film growth by close-spaced evaporation and transformation to GeH

[16p-Z23-5] Hydrogen simulation in the pyrite-type sulfide semiconductor FeS2

[16p-Z23-6] Optical dynamics prediction by first-principles simulation and AI based inverse design approach for core-shell colloidal quantum dot

[16p-Z23-7] Carrier lifetime and dark current of Mg2Si pn-junction diode formed on Mg2Si substrate by thermal diffusion

[16p-Z23-8] Relationship between Bias-voltage and Photosensitivity of Mg2Si Photodiodes with a ring-mesh-electrode

△ [16p-Z23-9] Effect of Zn1-xGexO interlayer on n+-AZO/p-BaSi2 heterojunction solar cells

[16p-Z23-10] Photoresponse properties of β-FeSi2 pn homojunction grown by MBE

Authenticate

[16p-Z23-1] Low temperature epitaxial growth of topological insulator Bi₂Se₃ and their electrical properties

[16p-Z23-4] CaGe₂ film growth by close-spaced evaporation and transformation to GeH

[16p-Z23-5] Hydrogen simulation in the pyrite-type sulfide semiconductor FeS₂

[16p-Z23-7] Carrier lifetime and dark current of Mg₂Si pn-junction diode formed on Mg₂Si substrate by thermal diffusion

[16p-Z23-8] Relationship between Bias-voltage and Photosensitivity of Mg₂Si Photodiodes with a ring-mesh-electrode

△ [16p-Z23-9] Effect of Zn_1-xGe_xO interlayer on n⁺-AZO/p-BaSi₂ heterojunction solar cells

[16p-Z23-10] Photoresponse properties of β-FeSi₂ pn homojunction grown by MBE