Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16p-Z27-1~15] 15.4 III-V-group nitride crystals

Tue. Mar 16, 2021 1:00 PM - 5:15 PM Z27 (Z27)

Motoaki Iwaya(Meijo Univ.), Ryuji Katayama(Osaka Univ.), Tomoyuki Tanikawa(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[16p-Z27-1] Analysis of AlGaN UVB LD to reduce threshold current density

〇Kosuke Sato^1,2, Tomoya Omori², Kazuki Yamada², Shunya Tanaka², Sayaka Ishizuka², Shohei Teramura², Sho Iwayama², Motoaki Iwaya², Hideto Miyake³, Tetsuya Takeuchi², Satoshi Kamiyama², Isamu Akasaki² (1.Asahi-Kasei, 2.Meijo Univ., 3.Mie Univ.)

1:15 PM - 1:30 PM

△ [16p-Z27-2] Mg concentration dependence of low Al composition polarized doped p-type AlGaN cladding layers on UV-B LD

〇(M1)Kazuki Yamada¹, Tomoya Omori¹, Shunya Tanaka¹, Yuya Ogino¹, Kosuke Sato^1,2, Sho Iwayama^1,3, Hideto Miyake³, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,4 (1.Meijo Univ., 2.Asahi-Kasei, 3.Mie Univ., 4.Akasaki Res. Cen., Nagoya Univ.)

1:30 PM - 1:45 PM

△ [16p-Z27-3] Study on improvement of injection efficiency in AlGaN-based UV-B LD structures

〇(B)Ayumu Yabutani¹, Tomoya Omori¹, Shunya Tanaka¹, Kazuki Yamada¹, Kosuke Sato^1,2, Sho Iwayama^1,3, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,4, Hideto Miyake³ (1.Meijo Univ., 2.Asahi Kasei, 3.Mie Univ., 4.ARC, Nagoya Univ.)

1:45 PM - 2:00 PM

△ [16p-Z27-4] Reduction of J_th in AlGaN-based UV-B LDs with high light confinement structure

〇(M1)Tomoya Omori¹, Syunya Tanaka¹, Yuya Ogino¹, Kazuki Yamada¹, Shohei Teramura¹, Kosuke Sato^1,2, Sho Iwayama^1,3, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,4, Hideto Miyake³ (1.Meijo Univ., 2.Asahi-Kasei Corp., 3.Mie Univ., 4.Akasaki Research Center, Nagoya Univ.)

2:00 PM - 2:15 PM

[16p-Z27-5] Low voltage operation of AlGaN homo tunnel junction deep UV LED

〇Kengo Nagata^1,2,3, Hiroaki Makino², Hiroshi Miwa^2,3, Shinichi Matsui^2,3, Shinya Boyama^2,3, Yoshiki Saito^2,3, Maki Kushimoto¹, Yoshio Honda⁴, Tetsuya Takeuchi⁵, Hiroshi Amano^4,6,7 (1.Dept. of Electronics Nagoya Univ., 2.Toyoda Gosei Co., Ltd., 3.TS Opto Co., Ltd., 4.IMaSS, Nagoya Univ., 5.Meijo Univ., 6.ARC, Nagoya Univ., 7.VBL, Nagoya Univ.)

2:30 PM - 2:45 PM

[16p-Z27-6] Discrete AlN mole fraction observed in AlGaN Layer with Dense Macrosteps (1)

〇Akira Hirano¹, Yosuke Nagasawa¹, Masamichi Ippommatsu¹, Hideki Sako², Ai Hashimoto², Ryuichi Sugie², Yoshio Honda³, Hiroshi Amano³, Isamu Akasaki⁴, Kazunobu Kojima⁵, Shigefusa Chichibu⁵ (1.UV Craftory Co., Ltd, 2.Toray Research Center Inc., 3.IMaSS, Nagoya Univ., 4.Meijo Univ., 5.IMRAM, Tohoku Univ.)

2:45 PM - 3:00 PM

[16p-Z27-7] Discrete AlN Mole Fraction Observed in AlGaN Layer with Dense Macrosteps (2)

〇Yosuke Nagasawa¹, Akira Hirano¹, Masamichi Ippommatsu¹, Hideki Sako², Ai Hashimoto², Ryuichi Sugie², Yoshio Honda³, Hiroshi Amano³, Isamu Akasaki⁴, Kazunobu Kojima⁵, Shigefusa Chichibu⁵ (1.UV Craftory Co. Ltd., 2.Toray Research Center Inc., 3.Nagoya Univ. IMaSS, 4.Meijo Univ., 5.Tohoku Univ. IMRAM)

3:00 PM - 3:15 PM

[16p-Z27-8] Discrete AlN Mole Fraction Observed in AlGaN Layer with Dense Macrosteps (3)

〇Yosuke Nagasawa¹, Kazunobu Kojima², Akira Hirano¹, Hideki Sako³, Ai Hashimoto³, Ryuichi Sugie³, Masamichi Ippommatsu¹, Yoshio Honda⁴, Hiroshi Amano⁴, Isamu Akasaki⁵, Shigefusa Chichibu² (1.UV Craftory Co. Ltd., 2.Tohoku Univ. IMRAM, 3.Toray Research Center Inc., 4.Nagoya Univ. IMaSS, 5.Meijo Univ.)

3:15 PM - 3:30 PM

[16p-Z27-9] Design and Fabrication of Transverse Quasi-Phase-Matched Polarity Inverted Double-Layer AlN Waveguide for 230-nm DUV Generation

〇Hiroto Honda¹, Takumi Nagata¹, Shuhei Ichikawa^1,2, Yasufumi Fujiwara¹, Kanako Shojiki³, Hideto Miyake^3,4, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ., 2.UHVEM, Osaka Univ., 3.Mie Univ., 4.RIS, Mie Univ.)

3:30 PM - 3:45 PM

△ [16p-Z27-10] Study on AlN Doubly-Resonant Microcavity Surface Emission DUV SHG Device

〇Tomoaki Nambu¹, Taketo Yano¹, Takumi Nagata¹, Ryo Tanabe¹, Soshi Umeda¹, Shuhei Ichikawa^1,2, Yasufumi Fujiwara¹, Masahiro Uemukai¹, Tomoyuki Tankawa¹, Ryuji Katayama¹ (1.Osaka Univ., 2.Research Center for UHVEM)

4:00 PM - 4:15 PM

[16p-Z27-11] Fabrication of GaN Waveguide Microcavity Device for Broadband Photon Pair Generation

〇Takumi Nagata¹, Soshi Umeda¹, Takeru Kumabe², Yuto Ando², Masato Deki^2,3, Yoshio Honda⁴, Hiroshi Amano^3,4,5, Polzin Thomas⁶, Kazuki Yamada⁶, Motoaki Iwaya⁶, Msahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ., 2.Nagoya Univ., 3.VBL Nagoya Univ., 4.IMaSS Nagoya Univ., 5.ARC Nagoya Univ., 6.Meijo Univ.)

4:15 PM - 4:30 PM

[16p-Z27-12] Growth of GaN quantum dots on AlN/sapphire templates

〇Munetaka Arita¹, Yasuhiko Arakawa¹ (1.NanoQuine, Univ. of Tokyo)

4:30 PM - 4:45 PM

[16p-Z27-13] Comparison of simulations of spectral diffusion in gallium nitride quantum dots of hexagonal disk structure and inverted pyramid structure

〇Tsubasa Asai¹, Yasuhiko Arakawa², Mark Holmes¹ (1.IIS Univ. of Tokyo, 2.NanoQuine, Univ. of Tokyo)

4:45 PM - 5:00 PM

[16p-Z27-14] High purity single photon Emission from an InGaN/GaN quantum dot

〇Mark Holmes^1,2, Tongtong Zhu³, Rachel A. Oliver³, Yasuhiko Arakawa² (1.IIS, Univ. of Tokyo, 2.NanoQuine Univ. of Tokyo, 3.Univ. of Cambridge)

5:00 PM - 5:15 PM

△ [16p-Z27-15] Analysis of GaN Model Photocatalyst with Comb-shaped Pt Electrode as Hydrogen Evolution Sites

〇(B)Tatsuro Endo¹, Soraya Shizumi¹, Tsutomu Minegishi², Masakazu Sugiyama^1,2 (1.Univ. Tokyo., 2.RCAST, Univ.Tokyo.)

Session information

[16p-Z27-1~15] 15.4 III-V-group nitride crystals

[16p-Z27-1] Analysis of AlGaN UVB LD to reduce threshold current density

△ [16p-Z27-2] Mg concentration dependence of low Al composition polarized doped p-type AlGaN cladding layers on UV-B LD

△ [16p-Z27-3] Study on improvement of injection efficiency in AlGaN-based UV-B LD structures

△ [16p-Z27-4] Reduction of J_th in AlGaN-based UV-B LDs with high light confinement structure

[16p-Z27-5] Low voltage operation of AlGaN homo tunnel junction deep UV LED

[16p-Z27-6] Discrete AlN mole fraction observed in AlGaN Layer with Dense Macrosteps (1)

[16p-Z27-7] Discrete AlN Mole Fraction Observed in AlGaN Layer with Dense Macrosteps (2)

[16p-Z27-8] Discrete AlN Mole Fraction Observed in AlGaN Layer with Dense Macrosteps (3)

[16p-Z27-9] Design and Fabrication of Transverse Quasi-Phase-Matched Polarity Inverted Double-Layer AlN Waveguide for 230-nm DUV Generation

△ [16p-Z27-10] Study on AlN Doubly-Resonant Microcavity Surface Emission DUV SHG Device

[16p-Z27-11] Fabrication of GaN Waveguide Microcavity Device for Broadband Photon Pair Generation

[16p-Z27-12] Growth of GaN quantum dots on AlN/sapphire templates

[16p-Z27-13] Comparison of simulations of spectral diffusion in gallium nitride quantum dots of hexagonal disk structure and inverted pyramid structure

[16p-Z27-14] High purity single photon Emission from an InGaN/GaN quantum dot

△ [16p-Z27-15] Analysis of GaN Model Photocatalyst with Comb-shaped Pt Electrode as Hydrogen Evolution Sites

Authenticate

Session information

[16p-Z27-1~15] 15.4 III-V-group nitride crystals

△ [16p-Z27-2] Mg concentration dependence of low Al composition polarized doped p-type AlGaN cladding layers on UV-B LD

△ [16p-Z27-3] Study on improvement of injection efficiency in AlGaN-based UV-B LD structures

△ [16p-Z27-4] Reduction of Jth in AlGaN-based UV-B LDs with high light confinement structure

△ [16p-Z27-10] Study on AlN Doubly-Resonant Microcavity Surface Emission DUV SHG Device

△ [16p-Z27-15] Analysis of GaN Model Photocatalyst with Comb-shaped Pt Electrode as Hydrogen Evolution Sites

Authenticate

△ [16p-Z27-4] Reduction of J_th in AlGaN-based UV-B LDs with high light confinement structure