〇Taro Enokizono¹, Takaya Miyase¹, Hiroki Nishihara¹, Tetsuro Kondo¹, Hironori Itoh¹, Tsutomu Hori¹, Masaki Furumai¹ (1.Sumitomo Electric Industries, Ltd)

11:00 AM - 11:15 AM

[17a-Z28-8] SiC Epitaxial reactor cleaning by detaching SiC film

Takumi Mamyouda¹, Masaya Hayashi¹, 〇Hitoshi Habuka¹, Akio Ishiguro², Shigeaki Ishii², Yoshiaki Daigo², Hideki Ito², Ichiro Mizushima², Yoshinao Takahashi³ (1.Yokohama National Univ., 2.NuFlare Technology, 3.KANTO DENKA KOGYO)

11:15 AM - 11:30 AM

[17a-Z28-9] To construct 4H-SiC p/n columns with relatively uniform doping profiles

〇Shiyang Ji¹, Katzutoshi Kojima¹, Mitsuru Sometani¹, Shinsuke Harada¹, Yasunori Tanaka¹, Hiroshi Yamaguchi¹ (1.AIST)

11:30 AM - 11:45 AM

[17a-Z28-10] Evaluation of the effect of the ion implantation process on carrier lifetimes in 4H-SiC SJ-UMOSFET

〇Takuya Fukui¹, Takeshi Tawara², Masashi Kato¹ (1.NITech., 2.AIST)

Session information

[17a-Z28-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[17a-Z28-1] Difference of macrostep flow behavior in 4H-SiC solution growth with various additives

[17a-Z28-2] Conversion of threading screw dislocation during off-oriented PVT growth of 4H-SiC

[17a-Z28-3] Interactions between Threading Edge Dislocations in 4H-SiC Crystal

[17a-Z28-4] Observation of behavior of threading dislocations by synchrotron section topography

[17a-Z28-5] Comparison of Al-adatom Concentrations near Step-edges during CVD of SiC on Si- and C-faces

[17a-Z28-6] Analysis of Surface-diffusion Lengths of Carbon- and Nitrogen-Containing Molecules during Homoepitaxial Growth of 4H-SiC (0001) under Silicon-rich Conditions

[17a-Z28-7] Behavior of carrot defects on SiC (000-1) face homoepitaxial layer

[17a-Z28-8] SiC Epitaxial reactor cleaning by detaching SiC film

[17a-Z28-9] To construct 4H-SiC p/n columns with relatively uniform doping profiles

[17a-Z28-10] Evaluation of the effect of the ion implantation process on carrier lifetimes in 4H-SiC SJ-UMOSFET

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