Session information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-Z27-1~14] 15.4 III-V-group nitride crystals

Wed. Mar 17, 2021 1:00 PM - 5:00 PM Z27 (Z27)

Mark Holmes(Univ. of Tokyo), Shuhei Ichikawa(Osaka Univ.), Takao Oto(Yamagata Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[17p-Z27-1] Influence of stacking faults on optical characteristics of multiple quantum wells in semi-polar {20-21} GaN

〇Shunsuke Tanigawa¹, Shogo Shingu², Narihito Okada², Jie Song³, Jung Han³, Kazuyuki Tadatomo² (1.Yamaguchi Univ., 2.Grad. School of Sci.&Tec. for Innov., Yamaguchi Univ., 3.Yale Univ.)

1:15 PM - 1:30 PM

[17p-Z27-2] Optical characteristics of multiple quantum wells on fully
relaxed {11-22} InGaN underlayer

〇Yuya Tawarazako¹, Rei Kawamura², Naoya Nishi², Yuya Harada¹, Nurfarah Najihah Mazalan¹, Narihito Okada², Satosi Kurai², Yoiti Yamada², Kazuyuki Tadatomo² (1.Department of Eng. Yamaguchi Univ., 2.Grad. School of Sci. & Eng. for Innovation, Yamaguchi Univ.)

1:30 PM - 1:45 PM

[17p-Z27-3] Excitation wavelength dependence of temperature-induced photoluminescence quenching in InGaN quantum wells

〇Takumi Yamaguchi¹, Kyosuke Ariga¹, Keito Mori¹, Atushi. A Yamaguchi¹ (1.KIT)

1:45 PM - 2:00 PM

[17p-Z27-4] Spatio-time-resolved cathodoluminescence study of InGaN/GaN multiquantum shells

〇Kohei Shima¹, Weifang Lu², Kazunobu Kojima¹, Satoshi Kamiyama², Tetsuya Takeuchi², Shigefusa Chichibu^1,3 (1.IMRAM-Tohoku Univ., 2.Meijo Univ., 3.IMaSS-Nagoya Univ.)

2:15 PM - 2:30 PM

[17p-Z27-5] Analysis of phonon transport process in GaInN film by two-wavelength simultaneous irradiation Raman spectroscopy

〇Tomoya Nakayama¹, Okamoto Shungo¹, Kotaro Ito¹, Ken Morita¹, Yoshihiro Ishitani¹, Bei Ma¹, Daisuke Iida², Kazuhiro Ohkawa² (1.Chiba Univ, 2.King Abudullah Univ)

2:30 PM - 2:45 PM

△ [17p-Z27-6] High efficiency Luminescence of nitride semiconductors with InGaN/GaN quantum wells by SiO₂ thin films

〇Seiya Kaito¹, Shimanoe Kohei¹, Matsuyama Tetsuya¹, Wada Kenji¹, Funato Mitsuru², Kawakami Yoichi², Okamoto Koichi¹ (1.Osaka prefecture Univ., 2.Kyoto Univ.)

2:45 PM - 3:00 PM

△ [17p-Z27-7] Analysis of mechanism of exciton emission rate by phononic-excitonic-radiative model

〇(M1)Masaya Chizaki¹, Kensuke Oki¹, Yoshihiro Ishitani¹ (1.Chiba Univ.)

3:00 PM - 3:15 PM

△ [17p-Z27-8] Enhanced radiative transition rate of Eu ions doped in GaN modulated by radiation fields in two-dimensional photonic crystal nanocavities

〇Takenori Iwaya¹, Masato Murakami¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

3:15 PM - 3:30 PM

△ [17p-Z27-9] Enhanced red emission of semipolar (20-21) Eu-doped GaN with narrow line-width

〇Atsushi Takeo¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

3:45 PM - 4:00 PM

[17p-Z27-10] Luminescence studies of nearly lattice-matched c-plane AlInN/GaN heterostructures

〇Liyang Li¹, Kohei Shima¹, Mizuki Yamanaka², Kazunobu Kojima¹, Takashi Egawa², Tetsuya Takeuchi³, Makoto Miyoshi², Shigefusa F. Chichibu^1,4 (1.IMRAM-Tohoku Univ., 2.Nagoya Inst. Tech., 3.Meijo Univ., 4.Nagoya Univ.)

4:00 PM - 4:15 PM

[17p-Z27-11] Study of the dielectric function models in the optical characterization of Al_1-xIn_xN alloys by using spectroscopic ellipsometry

〇Hayata Toyoda¹, Yuto Murakami¹, Rino Miyata¹, Daichi Imai¹, Takao Miyajima¹, Makoto Miyoshi², Tetsuya Takeuchi¹ (1.Meijo Univ., 2.Nagoya Inst. of Tech.)

4:15 PM - 4:30 PM

[17p-Z27-12] Raman spectroscopy of highly Si-doped GaN film at cross-section

〇Bei Ma¹, Mingchuan Tang¹, Ken Morita¹, Kohei Ueno², Atsushi Kobayashi², Hiroshi Fujioka², Yoshihiro Ishitani¹ (1.Chiba Univ., 2.The Univ. of Tokyo)

4:30 PM - 4:45 PM

[17p-Z27-13] Luminescence studies of bulk GaN crystals grown by the low-pressure acidic ammonothermal (LPAAT) method

Kohei Shima¹, Kohei Kurimoto², Quanxi Bao², Yutaka Mikawa³, Kazunobu Kojima¹, Tohru Ishiguro¹, 〇Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Japan Steel Works, 3.Mitsubishi Chemical)

4:45 PM - 5:00 PM

▲ [17p-Z27-14] Optical Properties of GaN/AlN Quantum-Dot-Bullseye UV Single Photon Emitters

〇(M2)SIJIA XIA¹, Tomoyuki Aoki¹, Kang Gao², Munetaka Arita², Yasuhiko Arakawa², Mark J. Holmes^1,2 (1.IIS, Univ. of Tokyo, 2.NanoQuine Univ. of Tokyo)

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