Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[18a-Z13-1~11] 6.2 Carbon-based thin films

Thu. Mar 18, 2021 9:30 AM - 12:30 PM Z13 (Z13)

Takayuki Iwasaki(Tokyo Tech), Norio Tokuda(Kanazawa Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[18a-Z13-1] Near surface impurity distributions of B-ion implanted diamond after high pressure and high temperature treatment

〇Kento Higashiura¹, Daiki Toriu¹, Rei Fukuta¹, Fumitaro Isikawa¹, Toru Shinmei², Hiroaki Ohfuji², Tetsuo Irifune² (1.Ehime Univ., 2.Ehime Univ. GRC)

9:45 AM - 10:00 AM

[18a-Z13-2] Formation of low compensation p-type conductive layers in the CVD diamond films accomplished by B ion implantation

〇Yuhei Seki¹, Sou Kawasaki¹, Yasushi Hoshino¹, Jyoji Nakata¹ (1.Kanagawa Univ.)

10:00 AM - 10:15 AM

[18a-Z13-3] Boron・nitrogen compensated doping for diamond

〇Taku Miyake¹, Hisaya Nakagawa¹, Hidenori Mimura¹, Tomoaki Masuzawa¹ (1.Shizuoka Univ.)

10:15 AM - 10:30 AM

△ [18a-Z13-4] Mechanism of Diamond Heteroepitaxial Growth on MgO Substrate

〇(B)Ryo Masaki¹, Ryota Takaya¹, Seong-Woo Kim², Yuki Kawamata², Koji Koyama², Chandra Niloy¹, Kasu Makoto¹ (1.Saga Univ., 2.Adamant Namiki Precision.)

10:30 AM - 10:45 AM

△ [18a-Z13-5] Highest Quality Heteroepitaxial Diamond Grown on Sapphire Substrate

〇(M1)Ryota Takaya¹, Seong-Woo Kim², Yuki Kawamata², Koji Koyama², Saha Chandra Niloy¹, Makoto Kasu¹ (1.Saga Univ, 2.Adamant Namiki Precision)

11:00 AM - 11:15 AM

▼ [18a-Z13-6] Improved Uniformity and Breakdown Strength of Schottky Barrier Diodes Fabricated on Diamond Heteroepitaxial Substrates

〇(D)PHONGSAPHAK Sittimart^1,2, Shinya Ohmagari¹, Tsuyoshi Yoshitake² (1.AIST, 2.Kyushu Univ.)

11:15 AM - 11:30 AM

▲ [18a-Z13-7] Observation of Nitrogen species at Al₂O₃/NO₂/H-diamond Interfaces Using Synchrotron X-ray Photoemission Spectroscopy

〇Niloy Chandra Saha¹, Kazutoshi Takahashi², Masaki Imamura², Makoto Kasu¹ (1.Dep. Electrical Electronic Eng., Saga Univ., 2.Synchrotron Light Application Center, Saga Univ.)

11:30 AM - 11:45 AM

△ [18a-Z13-8] Diamond MOSFETs with high concentration boron dope layer: Achievement of I_{DS max} = -1 A/mm and P_out = 3.6 W/mm

〇Fuga Asai¹, Ken Kudara¹, Masakazu Arai¹, Yukiko Suzuki¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.zaikai)

11:45 AM - 12:00 PM

△ [18a-Z13-9] Achievement of High Breakdown Voltage (>580 V)
in Vertical-Type 2DHG Diamond MOSFET by p^--drift layer

〇(B)Kosuke Ota¹, Jun Tsunoda¹, Naoya Niikura¹, Aoi Morishita¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Kagami Memorial Research Institute for Materials Science and Technology.)

12:00 PM - 12:15 PM

△ [18a-Z13-10] Proposal of a Mechanism for Signal Propagation of Seawater Wireless Communication utilizing Diamond Electrolyte Solution Gate FET

〇Hirotaka Sato¹, Teruaki Takarada¹, Kaito Tadenuma¹, Chang Yu Hao¹, Shuto Kawaguchi¹, Kawarada Hiroshi^1,2 (1.Waseda Univ., 2.ZAIKEN)

12:15 PM - 12:30 PM

[18a-Z13-11] The electrical spin injection into high carrier B doped p type single crystal diamond

〇Kenichiro Sakai¹, Tetsuya Okuyama¹, Hiroshi Miki¹, Hideki Murakami¹, Takeru Hamasaki², Kazuki Aramaki², Shinya Ohmagari³, Tetsuo Tabei⁴, Tsuyoshi Yoshitake² (1.Kurume KOSEN, 2.Kyushu University, 3.AIST, 4.Hiroshima University)

Session information

[18a-Z13-1~11] 6.2 Carbon-based thin films

[18a-Z13-1] Near surface impurity distributions of B-ion implanted diamond after high pressure and high temperature treatment

[18a-Z13-2] Formation of low compensation p-type conductive layers in the CVD diamond films accomplished by B ion implantation

[18a-Z13-3] Boron・nitrogen compensated doping for diamond

△ [18a-Z13-4] Mechanism of Diamond Heteroepitaxial Growth on MgO Substrate

△ [18a-Z13-5] Highest Quality Heteroepitaxial Diamond Grown on Sapphire Substrate

▼ [18a-Z13-6] Improved Uniformity and Breakdown Strength of Schottky Barrier Diodes Fabricated on Diamond Heteroepitaxial Substrates

▲ [18a-Z13-7] Observation of Nitrogen species at Al₂O₃/NO₂/H-diamond Interfaces Using Synchrotron X-ray Photoemission Spectroscopy

△ [18a-Z13-8] Diamond MOSFETs with high concentration boron dope layer: Achievement of I_{DS max} = -1 A/mm and P_out = 3.6 W/mm

△ [18a-Z13-9] Achievement of High Breakdown Voltage (>580 V)
in Vertical-Type 2DHG Diamond MOSFET by p^--drift layer

△ [18a-Z13-10] Proposal of a Mechanism for Signal Propagation of Seawater Wireless Communication utilizing Diamond Electrolyte Solution Gate FET

[18a-Z13-11] The electrical spin injection into high carrier B doped p type single crystal diamond

Authenticate

Session information

[18a-Z13-1~11] 6.2 Carbon-based thin films

[18a-Z13-1] Near surface impurity distributions of B-ion implanted diamond after high pressure and high temperature treatment

[18a-Z13-2] Formation of low compensation p-type conductive layers in the CVD diamond films accomplished by B ion implantation

[18a-Z13-3] Boron・nitrogen compensated doping for diamond

△ [18a-Z13-4] Mechanism of Diamond Heteroepitaxial Growth on MgO Substrate

△ [18a-Z13-5] Highest Quality Heteroepitaxial Diamond Grown on Sapphire Substrate

▼ [18a-Z13-6] Improved Uniformity and Breakdown Strength of Schottky Barrier Diodes Fabricated on Diamond Heteroepitaxial Substrates

▲ [18a-Z13-7] Observation of Nitrogen species at Al2O3/NO2/H-diamond Interfaces Using Synchrotron X-ray Photoemission Spectroscopy

△ [18a-Z13-8] Diamond MOSFETs with high concentration boron dope layer: Achievement of IDS max = -1 A/mm and Pout = 3.6 W/mm

△ [18a-Z13-9] Achievement of High Breakdown Voltage (>580 V) in Vertical-Type 2DHG Diamond MOSFET by p--drift layer

△ [18a-Z13-10] Proposal of a Mechanism for Signal Propagation of Seawater Wireless Communication utilizing Diamond Electrolyte Solution Gate FET

[18a-Z13-11] The electrical spin injection into high carrier B doped p type single crystal diamond

Authenticate

▲ [18a-Z13-7] Observation of Nitrogen species at Al₂O₃/NO₂/H-diamond Interfaces Using Synchrotron X-ray Photoemission Spectroscopy

△ [18a-Z13-8] Diamond MOSFETs with high concentration boron dope layer: Achievement of I_{DS max} = -1 A/mm and P_out = 3.6 W/mm

△ [18a-Z13-9] Achievement of High Breakdown Voltage (>580 V)
in Vertical-Type 2DHG Diamond MOSFET by p^--drift layer