Session information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18a-Z24-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Mar 18, 2021 9:00 AM - 11:30 AM Z24 (Z24)

Masakazu Arai(Univ. of Miyazaki), Sachie Fujikawa(Saitama University)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[18a-Z24-1] Fabrication of lattice matched GaAsPN solar cell on Si substrates (2)

〇Tomoya Arai¹, Keisuke Yamane¹, Toshinori Eko¹, Daiki Hamamoto¹, Akihiro Wakahara¹ (1.Toyohashi University of Technology)

9:15 AM - 9:30 AM

△ [18a-Z24-2] Effects of Annealing Treatment on N Distribution and Electrical Characteristics of GaAsN Films with Different N Distribution Grown by Atomic Layer Epitaxy

〇Ryo Nakajima¹, Masahiro Kawano¹, Ryo Minematsu¹, Tomohiro Haraguchi¹, Hidetoshi Suzuki¹ (1.Miyazaki Univ.)

9:30 AM - 9:45 AM

[18a-Z24-3] Growing rate dependence of InGaAs/GaAs core-shell nanowires by molecular beam epitaxy

〇Kohei Yoshikawa¹, Masahiro Okujima¹, Fumitaro Ishikawa¹ (1.Ehime Univ.)

9:45 AM - 10:00 AM

[18a-Z24-4] [Highlight]Stacking-fault-driven formation of atomically-abrupt heterointerfaces in III-V nanowires

〇Guoqiang Zhang^1,2, Tateno Kouta^1,2, Tawara Takehiko^1,2, Gotoh Hideki¹ (1.NTT BRL, 2.NTT NPC)

10:15 AM - 10:30 AM

[18a-Z24-5] Growth of Bismide compound semiconductor on InP(311)B substrate

〇Kouichi Akahane¹, Atsushi Matsumoto¹, Toshimasa Umezawa¹, Yoriko Tominaga², Naokatsu Yamamoto¹ (1.NICT, 2.Hiroshima Univ.)

10:30 AM - 10:45 AM

[18a-Z24-6] Control of GaBi molar fraction of GaAs_1-xBi_x grown at low temperatures

〇Yoriko Tominaga^1,2, Tatsuya Umenishi¹, Yuto Takagaki², Mitsuki Yukimune³, Fumitaro Ishikawa³ (1.Adv. Sci. and Eng., Hiroshima Univ., 2.AdSM, Hiroshima Univ., 3.Sci. Eng., Ehime Univ.)

10:45 AM - 11:00 AM

[18a-Z24-7] As flux dependence of polairization PL from (100) GaAsBi/GaAs QWs

〇Takuma Hayashi¹, Takumi Yamamoto¹, Ayaka Shimizu¹, Satoshi Shimomura¹ (1.Ehime Univ.)

11:00 AM - 11:15 AM

[18a-Z24-8] Evaluation of Sb segregation on GaAsSb / GaAs (001) at the initial stage of lattice relaxation

〇(M1)Kensuke Maeda¹, Koshiro Kubo¹, Masahiro Kawano¹, Takuo Sasaki², Masamitu Takahashi², Hidetoshi Suzuki¹ (1.Miyazaki Univ, 2.QST)

11:15 AM - 11:30 AM

[18a-Z24-9] Band diagrams and low temperature transport properties of InAs_xSb_1-x/Al_yIn_1-ySb quantum wells

〇Takashi Manago¹, Kenji Kasahara¹, Ichiro Sibasaki² (1.Fukuoka Univ., 2.The Noguchi Inst.)

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