Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-Z33-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 18, 2021 9:00 AM - 11:30 AM Z33 (Z33)

Yamada Naoomi(Chubu Univ.), Magari Yusaku(Simane Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[18a-Z33-1] Transformation from degenerate to non-degenerate Sn-doped In₂O₃ films by postirradaition of O^- ions

〇Yutaka Furubayashi¹, Makoto Maehara², Toshiyuki Sakemi², Hisashi Kitami^1,2, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Industr. ltd.)

9:15 AM - 9:30 AM

[18a-Z33-2] New evaluation of degenerate/non-degenerate states and novel bandagp engineering of Sn-doped In₂O₃ films by postirradaition of O^- ions

〇Yutaka Furubayashi¹, Makoto Maehara², Toshiyuki Sakemi², Hisashi Kitami^1,2, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Ind., ltd.)

9:30 AM - 9:45 AM

[18a-Z33-3] Flexible transparent electrode with a high bending resistance based on hybrid of ITO micro-structure and metal grid

〇Akira Watanabe¹, Ashiqur Rahman¹, Megumi Komada² (1.IMRAM, Tohoku Univ., 2.Sumitomo Chemical)

9:45 AM - 10:00 AM

[18a-Z33-4] The sputter deposition of broadband transparent conductive In₂O₃:Ce,H and its transfer to silicon heterojunction solar cells

〇Takashi Koida¹, Leonard Tutsch^1,2, Hitoshi Sai¹, Takuya Matsui¹, Martin Bivour², Martin Hermle² (1.AIST, 2.Fraunhofer ISE)

10:00 AM - 10:15 AM

[18a-Z33-5] Effects on the photocatalytic activity and the wettability of depositing WO_x thin films and WO_x-SiO₂composite thin films on the TiO₂ surface by RF sputtering

〇Tomoaki Miyagi¹, Yoshiro Takahashi¹, Yasuki Akimoto¹, Masaki Sonoda¹ (1.Oita Inst.)

10:30 AM - 10:45 AM

[18a-Z33-6] Insulating-Degenerated-Insulating transition observed in electrical properties of mixed anion layered compounds, LaCu_1-δS_0.5Se_0.5O (δ=0-0.02)

〇Yoichi Kamihara^1,3, Nobuhiko Azuma¹, Ryosuke Sakagami¹, Hidetomo Usui² (1.Dep.APPI, Keio Univ., 2.Shimane Univ., 3.CSRN, Keio Univ.)

10:45 AM - 11:00 AM

[18a-Z33-7] Fabrication of miniaturized ITZO TFT for Active Pixel Image Sensor Application

〇Toshikatsu Sakai¹, Koki Imamura¹, Tomomi Takagi¹, Keitada Mineo¹, Toshihisa Watabe¹, Hiroto Sato¹, Satoshi Aihara¹ (1.NHK Sci. & Tech. Res. Labs.)

11:00 AM - 11:15 AM

[18a-Z33-8] Polycrystalline IGO:H films for high-mobility thin-film transistors

Kenta Simpo¹, Daiki Tanaka¹, Toshihiro Matsumura¹, Taiki Kataoka¹, Yusaku Magari¹, 〇Mamoru Furuta¹, Daichi Sasaki², Emi Kawashima², Yuki Tsuruma² (1.Kochi Univ. of Tech., 2.Idemitsu Kosan.)

11:15 AM - 11:30 AM

[18a-Z33-9] Schottky barrier diode using ultra-wide bandgap amorphous oxide semiconductor, a-Ga-O

〇Keisuke Ide¹, Yurika Kasai¹, Takayoshi Katase¹, Hidenori Hiramatsu^1,2, Hideo Hosono², Toshio Kamiya^1,2 (1.MSL, Tokyo Tech., 2.MCES, Tokyo Tech.)

Session information