[16a-Z13-1~12] 13.3 Insulator technology

△ [16a-Z13-7] Significant change of interface dipole effect at perovskite oxide epitaxial interface by the number of charge-introducing atomic layer

〇Atsushi Tamura¹, Seungwoo Jang², Young-Geun Park², Hanjin Lim², Koji Kita¹ (1.Dept. of Materials Engineering, The Univ. of Tokyo, 2.Semiconductor R&D Center, Samsung Electronics)

Keywords:dipole effect, insulator, DRAM

In the epitaxial interface of perovskite oxides, the dipole effect is induced by the insertion of a layer of charged atoms. SrRuO₃ and SrTiO₃ were deposited on a STO substrate, and the thickness of the LaAlO₃ layer inserted between the layers was varied, and the cut-off energy was measured by XPS. When the insertion amount was 1 u.c., the excess of (LaO)⁺ layer introduced positive charge and created a dipole with the negative charge induced in SRO, and when the insertion amount was 3 u.c., the dipole effect seemed to occur in the opposite direction, and the direction and strength of the dipole effect could be modulated by the amount of introduced charge.