[16a-Z16-1~11] 13.7 Compound and power electron devices and process technology

[16a-Z16-10] High channel mobility of GaN-MOSFETs with controlled surface

〇Katsunori Ueno¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹ (1.Fuji Electric)

Keywords:GaN, MOSFET, mobility

Improving electron mobility is strongly desired for the practical use of GaN-based power devices, and the control of MOS channel is one of the important technologies. Thin AlGaN layer below the gate-insulator may shift channel electrons from the isulator/GaN interface toward AlGaN/GaN interface and be expected to improve the electron mobility suppressing 2-DEG layer. For that purpose, we attempted to form AlGaN layer by thermal reaction between AlN and GaN before the gate-insulator deposition. As the result, the feasibility of the high mobility was suggested.