10:30 〜 10:45
▲ [16a-Z18-3] Cd-Free ZnCuInS/ZnS Quantum Dot Light Emitting Diodes with Mixed Single Layer
キーワード：Quantum Dot Light Emitting Diodes, Sputtered Zinc Oxide layer, Inverted structure
Quantum dot (QD) light-emitting diodes (QLEDs) is one of the emerging research fields due to the highly quantum yield and variation of wavelength by changing a size of QD. Performances of the QLED is dependent not only on the fabrication procedure but also on the device structure, i.e. electron transport material (ETM), and hole transport material (HTM) to balance the carrier mobility. Conventional stacked structured QLEDs is limited to the carrier injection because of a insertion of the QD itself. Considering this problem, we have investigated the mixed single layer (MSL)-QLED by controlling the carrier injection and balance. In addition, in order to prevent an environmental deterioration, we select the cadmium-free QD. Together with Cd-free and MSL-QLED, an inverted device structure were evaluated with metallic ZnO layer as electron injection layer.