[16a-Z24-1~4] 15.2 II-VI族結晶および多元系結晶

▲ [16a-Z24-1] Influence of oxygen flow rate during the growth of Al-doped ZnCdO thin films by MBE

〇(D)HyoChang Jang¹、Katsuhiko Saito¹、Qixin Guo¹、Tooru Tanaka¹ (1.Saga Univ.)

キーワード：ZnCdO, thin film, MBE

Recently, a lot of studies have been performed to investigate low resistivity transparent conductive oxides (TCOs). Among TCO materials, CdO is taking attention as a potential material due to high mobility of 200 cm²/Vs. This characteristic enables a low carrier concentration that can extend a plasma reflection and the free carrier absorption effects to a much wider wavelength region over 2000 nm. Although the band gap of CdO is smaller than other TCOs materials, the band gap can be expanded by alloying with ZnO. In the previous study, we grew Al-doped ZnCdO thin films on MgO (100) substrates by radical-source molecular beam epitaxy (MBE) under the oxygen flow rate of 0.3 sccm (referred as “0.3 sccm-films”) and clarified Al-doping effect in ZnCdO. In this study, we have grown Al-doped ZnCdO thin films under high oxygen flow rate of 1 sccm (referred as “1 sccm-films”), and electrical and optical properties were compared and analyzed in detail.