In-situ annealing of MOVPE grown CdTe layers on n<sup>+</sup>-(211)Si substrate

Toshiki Matsubara; Tatsuhiro Kobayashi; Hayata Goto; Seiya Fujii; Yukichika Nakashima; Sousuke Hirano; Madan Niraura; Kazuto Yasuda

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Oral presentation

15 Crystal Engineering » 15.2 II-VI and related compounds

[16a-Z24-1~4] 15.2 II-VI and related compounds

Tue. Mar 16, 2021 9:00 AM - 10:00 AM Z24 (Z24)

Tamotsu Okamoto(Natl. Inst. of Tech., Kisarazu Col.)

9:15 AM - 9:30 AM

[16a-Z24-2] In-situ annealing of MOVPE grown CdTe layers on n⁺-(211)Si substrate

〇(M1)Toshiki Matsubara¹, Tatsuhiro Kobayashi¹, Hayata Goto¹, Seiya Fujii¹, Yukichika Nakashima¹, Sousuke Hirano¹, Madan Niraura¹, Kazuto Yasuda¹ (1.Nitech)

Keywords:Annealing process

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Presentation information

[16a-Z24-1~4] 15.2 II-VI and related compounds

[16a-Z24-2] In-situ annealing of MOVPE grown CdTe layers on n+-(211)Si substrate

[16a-Z24-2] In-situ annealing of MOVPE grown CdTe layers on n⁺-(211)Si substrate