[16a-Z24-1~4] 15.2 II-VI and related compounds

△ [16a-Z24-4] Control of the MEE grown interface layer for ZnTe (110) thin film growth on sapphire r, S-plane nano-facet substrate

〇(M1)Shotaro Kobayashi¹, Tatsuya Ando¹, Yuya Sakamoto¹, Kota Sugimoto¹, Kaito Tsuboi¹, Nanano Hosoi¹, Masakazu Kobayashi^1,2 (1.Waseda Univ. Dept.of.EE.&BS, 2.Waseda Univ. Lab.for Mat.Sci.&Tech)

Keywords:Semiconductor, Crystal growth

We are aiming to fabricate a (110) oriented ZnTe thin film on a sapphire substrate for the application of terahertz wave detection elements. We are trying to obtain a ZnTe (110) thin film by using a sapphire m-plane substrate having a nano-facet structure in which the r-plane and S-plane are arranged periodically and continuously. This time, the MEE growth layer was deposited under higher temperature conditions in order to selectively form growth nuclei on the S nano-facet plane. We report the results of orientation analysis of the ZnTe thin film by X-ray diffraction.