[16a-Z27-1~9] 15.4 III-V-group nitride crystals

[16a-Z27-5] Study on GaN-based photovoltaic devices for optical wireless power transmission system

〇Kosuke Yamamoto¹, Pradip Dalapati¹, Egawa Takashi¹, Miyoshi Makoto¹ (1.Nagoya Inst. Tech.)

Keywords:GaInN/GaN-MQW

Aiming at a photodetectors for the optical wireless power transmission system consisting of semiconductor light-emitting devices and photodetectors, a photodetector epi-structure employing GaN/GaInN-MQWs was grown by metalorganic chemical vapor deposition (MOCVD) on c-plane sapphire. Then, the spectral sensitivity and photo-electrical characteristics were evaluated. The maximum external quantum efficiency (EQE) was measured to be 74% at a wavelength of 382 nm, and energy conversion efficiency of 32% was obtained at a 382-nm-wavelength light irradiation with a light power of 5mW/cm² . Further improvement in enegry efficiency might be obtained under higher-power light irradiation.