[16a-Z29-1~3] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[16a-Z29-2] Electronic properties and localized states in Ge-S films

〇(M2)Shogo Kuroiwa¹, Tamihiro Goto¹ (1.Gunma univ.)

Keywords:Calcogenide, Localized states, PDS

We focused on GeS as a material for 2-terminal selector device, which is important for increasing the density of electronic devices, and evaluated its electronic characteristics and localization states. To use it as a selector devices, it is necessary to understand the carrier characteristics. Therefore, the GeS thin film was analyzed by photothermal deflection spectroscopy to evaluate the localization states. This clarified the electron density of states and considered the carrier formation mechanism.