The 68th JSAP Spring Meeting 2021

Presentation information

Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16p-P01-1~16] 15.4 III-V-group nitride crystals

Tue. Mar 16, 2021 1:00 PM - 1:50 PM P01 (Poster)

1:00 PM - 1:50 PM

[16p-P01-10] Effect of strain of template on current injection efficiency for AlGaN-based deep-ultraviolet light-emitting diodes

GUODONG HAO1, Shin-ichiro Inoue1 (1.NICT)

Keywords:AlGaN DUV-LED, Template Strain, Current injection efficiency

AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) have attracted an increasing attention as an effective method for disinfection and sterilization, especially to kill the coronavirus (COVID-19). However, the wall-plug efficiency (WPE) of DUV-LEDs is still very low (< 8%). The low current injection efficiency (CIE) is one factor that limits the WPE of AlGaN-based DUV-LEDs under electrical injection.1 It is well known that the strain plays a crucial role in the performance of the DUV-LEDs. A number of studies focused on strain effects on the radiative recombination efficiency due to the quantum-confined Stark effect (QCSE) of the quantum wells (QWs). The strain effects on the light extraction efficiency via the modulation of the photon polarization have also been investigated extensively. In this talk, we report a theoretical simulation of the CIE dependence on strain of AlN template in AlGaN-based DUV-LEDs.