[16p-P01-1~16] 15.4 III-V-group nitride crystals

[16p-P01-13] Enhancement of ON/OFF ratio of nonvolatile memory characteristics using GaN/AlN resonant tunneling diodes

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

Keywords:nitride semiconductor, intersubband transition, nonvolatile memory

Higher-performance of nonvolatile memory is important for the realization of IoT society and Society 5.0. We are aiming to realize a high-speed nonvolatile memory using the intersubband transitions in GaN-based resonant tunneling diodes (GaN-based RTDs). In this presentation, we report the realization of a high ON/OFF ratio above 600, which is approximately 20 times higher than the previous values, by the improvement of the growth conditions of GaN-based RTDs. This result also supports that the nonvolatile memory operations using GaN-based RTDs are caused by the intersubband transitions and electron accumulation in the quantum well.