[16p-P01-1~16] 15.4 III-V-group nitride crystals

[16p-P01-16] Growth of AlN thin films by pressure gradient sputtering

〇(M1)Kengo Haraguchi¹, Ryo Ichinose¹, Hiroki Ohta², Ken Yonezawa², Yoshikazu Terai¹ (1.Kyushu Inst. of Tech, 2.Kenix Co., Ltd.)

Keywords:aluminium nitride, equipment technology, growth (sputtering)

In the conventional sputtering deposition of AlN, it is difficult to fabricate highly oriented c-axis films because of the high pressure of 1 Pa during growth and the low reactivity of nitrogen plasma. In this study, we focused on the pressure gradient sputtering (PGS) deposition, which enables growth in a high vacuum (~0.1 Pa) and high reactivity sputtering, and measured the pressure gradient in the PGS system, fabricated AlN films, and evaluated their structures.