[16p-P01-1~16] 15.4 III-V-group nitride crystals

[16p-P01-2] Effect of Substrate under Graphene on Remote Epitaxy of InN

〇Kenta Matsushima¹, Shinichiro Mouri¹, Tsutomu Araki¹ (1.Ritsumeikan Univ.)

Keywords:crystal growth, graphene, nitride semiconductor

A crystal growth technique called remote epitaxy, in which pseudo epitaxial growth is performed by using a graphene as a buffer layer, has been proposed. We performed InN growth by remote epitaxy using InN and GaN substrates with similar ionicity, and investigated the effect of pseudo-lattice matching. Even if the ionicity was the same, a better thin film was obtained by crystal growth using the substrate material which is the same as growth crystal. Therefore, it is considered that pseudo-lattice matching is an important factor in remote epitaxy.