[16p-P01-1~16] 15.4 III-V-group nitride crystals

[16p-P01-8] Stability analysis of N-vacancy complexes in GaN by first principles calculations

〇Yuki Ohuchi¹, Ryo Tanaka¹, Katsunori Ueno¹, Shinya Takashima¹ (1.Fuji Electric)

Keywords:GaN, first principles calculations, vacancy complexes

GaN is one of the promising semiconductors for next-generation power switching devices. From practicality and reliability viewpoints, it is essential to form a p-type layer by ion-implantation (I/I). One of the difficulties in hole conduction by I/I has been assigned to carrier trapping accompanied with the introduction of vacancy-type defects. Therefore, the formation mechanism of such vacancy complexes is need to be elucidated for doping control with Mg-I/I. Here we present the stability of N-vacancy complexes in GaN studied by first principles calculations.