[16p-P02-1~4] 15.5 Group IV crystals and alloys

[16p-P02-3] Room temperature EL from strained Ge-on-Si(111) diode structure

〇Yuwa Sugiura¹, Youya Wagatsuma¹, Koudai Yamada¹, Yusuke Hoshi¹, Michihiro Yamada², Kohei Hamaya², Kentarou Sawano¹ (1.Adv. Res. Lab., Tokyo City Univ., 2.CSRN, Osaka Univ.)

Keywords:Ge, Si(111), EL