[16p-P05-1~7] 6.2 Carbon-based thin films

[16p-P05-5] Influence of dislocations on diamond schottky barrier diode characteristics

〇Naoki Mikata¹, Kimiyoshi Ichikawa², Tokuyuki Teraji^2,1, Shinichi Shikata¹ (1.Kwansei Gakuin Univ, 2.National Institute for Materials Science)

Keywords:diamond, Dislocation, Schottky barrier diode (SBD)

Influence of dislocations on diamond Schottky barrier diode characteristics of vertical structure p- layer/p+ substrate is studied. Devices are intentionally fabricated at locations corresponding to specific dislocations, no dislication and [001] threading dislocation area observed using X-ray topography (XRT) prior to device fabrication. Pyramidal growth hillock device generated by [001] threading dislocation showed very large leak currents compared to no dislocation device. However, flat growth hillock device with [001] threading dislocation didn’t significantly affect the reverse characteristics. It is considered that there is a difference depending on type of threading dislocation bundles that make up the growth hillock. We need further consideration in the future.