[16p-P05-1~7] 6.2 Carbon-based thin films

[16p-P05-7] Evaluation of Uniformity in Heavily Boron Doped Layer on a Mosaic Diamond Substrate

Kazuki Fuji¹, Naoki Okamoto¹, 〇Takeyasu Saito¹, Takehiro Shimaoka², Shinya Ohmagari², Hideaki Yamada² (1.Osaka Pref. Univ., 2.AIST ADPERC)

Keywords:Mosaic Diamond, Heavily Boron Dope, Evaluation of Uniformity

Inch-sized substrates are required for progress of diamond devices, but most of them are still 2 to 10 mm squares. there are few reports of doping uniformity on inch-sized substrates. The standard deviations of the boron concentration obtained by Raman spectroscopy at a boundary position and a 5 mm away from the boundary of the heavily boron-doped layer grown on a 20 mm square single crystal mosaic substrate are 9.1 × 10¹⁹ and 2.6 × 10¹⁹, respectively. The impact on device properties is considered to be small.