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[16p-Z03-1] Study of X-ray induced changes in the force signal in XANAM measurements on a Si- Ge quantum dot

〇Shushi Suzuki¹, Shingo MUKAI², Wang Jae CHUN³, Masaharu NOMURA⁴, Syuntarou FUJIMORI¹, Mitsuhisa IKEDA¹, Katsunori MAKIHARA¹, Seiichi MIYAZAKI¹, Kiyotaka ASAKURA² (1.Nagoya Univ., 2.Hokkaido Univ., 3.ICU, 4.KEK-PF)

Keywords:X-ray, Germanium, Elemental Analysis

We have developed X-ray aided noncontact atomic force microscope (XANAM) that combines NC-AFM and synchrotron radiation X-rays to study chemical analysis of a sample surface at the nanoscale. We previously reported that Ge quantum dots under X-ray irradiation could be imaged at the nanoscale. In the present study, we report results of the X-ray energy dependence of Ge quantum dots and Si-capped Ge quantum dots in high precision and discuss whether the origin of X-ray induced force change is the tip-surface covalent bonding.