[16p-Z07-1~11] Power device technology trends and future prospects

[16p-Z07-1] Technology Trends of Silicon IGBT and Scaling IGBT

〇Toshiro Hiramoto¹, Ichiro Omura² (1.The Univ. of Tokyo, 2.Kyushu Inst. of Tech.)

Keywords:Power Transistors, Digital Gate Drive Circuits, Silicon IGBT

The technology trends of silicon IGBT will be reviewed. Furthermore, the concept of “Scaling IGBT” will be introduced, where various technologies of longer carrier lifetime of Si wafers, scaled/shallowed device structures, and digital gate drive circuits are integrated.