[16p-Z07-1~11] Power device technology trends and future prospects

[16p-Z07-11] 1.3 kV normally-off β-Ga₂O₃ vertical transistor with HfO₂ gate-insulator

〇Daiki Wakimoto¹, Chia-Hung Lin¹, Quang Tu Thieu¹, Hironobu Miyamoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Tech.)

Keywords:Gallium Oxide, MOS transistor, HfO2

Vertical β-Ga₂O₃ FinFETs are developed employing high-k HfO₂ as gate-insulator. The donor concentration of 1.7 x 10¹⁶ cm^-3 and thickness of 10 μm in the n-drift region allows three terminal breakdown voltages up to 1.3 kV. The devices operate in the enhancement mode with a threshold voltage of ~0.4 V, an on-resistance of ~9.8 mW.cm², and an output current of 310 A/cm² which are calculated using the effective conduction width of ~10 μm considering current spreading in the drift region.