[16p-Z07-1~11] Power device technology trends and future prospects

[16p-Z07-7] GaN MOSFET characteristics of the controlled interface for vertical power devices

〇Hidemoto Tomita¹, Sayaka Harada¹, Takashi Okawa¹, Yoshitaka Nagasato¹, Li Liu², Toshiyuki Kawaharamura² (1.MIRISE Technologies Corp., 2.Kochi Univ. of Tech.)

Keywords:mobility, MOS interface, Mist CVD

In order to suppress the Ga oxide layer preventing a high mobility, a lateral MOSFET was fabricated by Mist CVD using O₃ that has a lower oxidizing ability than O₂ plasma. As a result, it was confirmed that the Ga oxide layer was not detected at the MOS interface by XPS, and coexistence between μ_FE (265.7cm²/Vs) and Vth (4.8V) was achieved at a high level. So it proved to be competitive compared to the channel characteristics of other competitors and it was confirmed that SiO₂ deposited by Mist CVD has potential as a gate oxide for automotive GaN power devices.