[16p-Z12-1~17] 8.8 Division of Plasma Electronics 30th Anniversary Special Session

[16p-Z12-14] Ar ion energy dependence on characteristics of atomic layer etching for GaN by Cl adsorption

〇Takayoshi Tsutsumi¹, Masaki Hasegawa¹, Shohei Nakamura^1,2, Atsushi Tanide², Hiroki Kondo¹, Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ., 2.SCREEN Holdings Co., Ltd)

Keywords:Atomic layer etching, Gallium nitride

A cyclic process of Ar ion exposure and Cl adsorption onto GaN has been developed as Atomic layer etching (ALE) to offers a precise control of GaN etching. To realize the ALE, full understanding of surface reactions in each cycle step is required to elucidate the Cl adsorption on the Ar ion bombarded GaN surface using the beam experiments and the in situ X-ray photoelectron spectroscopy (XPS). In this study, we report quantitative analysis of the surface reaction and the ion energy dependence on the reaction during the ALE process.