[16p-Z15-1~13] 6.6 Probe Microscopy

▼ [16p-Z15-3] Observation of mechanical energy dissipation between a conductive tip and a thin dielectric film on a metal-coated Si substrate by frequency modulated atomic force microscopy

〇(D)MdMahamudul Hasan Hasan¹, Tomitori Masahiko¹ (1.JAIST)

Keywords:Frequency modulated atomic force microscopy, Capacitive coupling, Energy dissipation

To characterize the atomic-scale force interaction between a tip and a sample with atom-resolved images, frequency modulated atomic force microscopy (FM-AFM) is highly appreciated. Characterization of two-dimensional (2D) nanosheets using FM-AFM has been utilized for the last three decades. Besides imaging, surface nanoscale properties (resistance, capacitance, tunneling current, force, dissipation, etc.) have also been investigated for not only understanding of such phenomenon but also the realization of valuable applications. Recently, the mechanical energy dissipation concerning capacitive coupling between a tip and a sample has attracted much attention due to its complexity at the nanoscale and a shorter distance where electron tunneling can appear¹. In the present work, we measure and discuss the change in dissipation energy via capacitive coupling including an equivalent circuit model on a dielectric sample and metal-coated silicon (Si) substrate by using FM-AFM.