14:15 〜 14:30
▲ [16p-Z22-4] Top- and Bottom-Contact CeO2 Nanogap Gas Sensor
キーワード：gas sensor, nanogap electrodes, cerium oxide
Owing to the small size, low cost and the possibility of mass-production, resistive-type gas sensor based on metal-oxide semiconductor has become a promising candidate for gas sensing applications.
In this work, we demonstrate top-contact and bottom-contact types of CeO2 nanogap gas sensors’ responses.The CeO2 sensing layer with a thickness of 28 nm was prepared by spin-coating method. The Pt-based nanogap electrodes were fabricated by a combination of electron-beam lithography and electron-beam evaporation methods. The electrode linewidth and gap separation are estimated as approximately 10 and 20 nm, respectively by SEM images. The sensor response was evaluated by measuring the change in sensor’s conductance when the oxygen partial pressure was changed at an operating temperature of 300 ℃.
In this work, we demonstrate top-contact and bottom-contact types of CeO2 nanogap gas sensors’ responses.The CeO2 sensing layer with a thickness of 28 nm was prepared by spin-coating method. The Pt-based nanogap electrodes were fabricated by a combination of electron-beam lithography and electron-beam evaporation methods. The electrode linewidth and gap separation are estimated as approximately 10 and 20 nm, respectively by SEM images. The sensor response was evaluated by measuring the change in sensor’s conductance when the oxygen partial pressure was changed at an operating temperature of 300 ℃.