[16p-Z25-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [16p-Z25-1] Chemical etching of silicon assisted by graphene oxide in vapor phase

〇Wataru Kubota¹, Toru Utsunomiya¹, Takashi Ichii¹, Hiroyuki Sugimura¹ (1.Kyoto Univ.)

Keywords:silicon etching, graphene oxide, catalyst

Chemical etching of silicon assisted by several types of catalysts such as noble metals or carbon materials has been drawing much attention for the fabrication of silicon micro/nano structures. We have demonstrated that graphene oxide, a 2D nanocarbon material, can work as the catalyst towards the etching reaction in the mixture of HF and HNO3. Recently, assisted-etching of silicon in vapor phase has been in the limelight. Vapor-phase assisted etching can solve some problems which assisted etching in solution have, for example, desorption of catalysts due to convection of the solution and gases such as hydrogen generated during the reaction, and porousness of the uncoated part of the catalyst. In this presentation, we have attempted to apply vapor phase system towards the graphene oxide-assisted etching of silicon.