[16p-Z26-1~15] CS.5 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェアセッション

▼ [16p-Z26-6] A First-Principles Study on Ferroelectric Phase Formation of Si-Doped HfO₂

〇(P)Jixuan Wu¹、Fei Mo¹、Takuya Saraya¹、Toshiro Hiramoto¹、Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo)

キーワード：Ferroelectric materials, First-principles simulation, Si-doped HfO2

Ferroelectric materials have been widely used in low-power memory devices for many years. With the demand for high density, HfO₂-based ferroelectric has been attracting much attention in recent years because it shows ferroelectricity even below 10nm, which is promising for device scaling [1-2]. In this work, to understand ferroelectric phase formation in thermal process, we study fundamental thermodynamics and kinetics of pure and Si-doped HfO₂ at finite size and finite temperature including surface energy, entropy based on first-principles simulation.