[16p-Z27-1~15] 15.4 III-V-group nitride crystals

[16p-Z27-12] Growth of GaN quantum dots on AlN/sapphire templates

〇Munetaka Arita¹, Yasuhiko Arakawa¹ (1.NanoQuine, Univ. of Tokyo)

Keywords:quantum dots, AlN, MOCVD

We have been developing fundamental technologies toward ultraviolet GaN quantum dot lasers. Here, we demonstrate MOCVD growth of AlN and GaN/AlN quantum dots on AlN/sapphire templates, for the purpose of improving the crystal quality of AlN buffer layers. Distinct improvement of the structural and the optical characteristics are observed, compared to the conventional samples grown on sapphire substrates.