The 68th JSAP Spring Meeting 2021

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16p-Z27-1~15] 15.4 III-V-group nitride crystals

Tue. Mar 16, 2021 1:00 PM - 5:15 PM Z27 (Z27)

Motoaki Iwaya(Meijo Univ.), Ryuji Katayama(Osaka Univ.), Tomoyuki Tanikawa(Osaka Univ.)

5:00 PM - 5:15 PM

[16p-Z27-15] Analysis of GaN Model Photocatalyst with Comb-shaped Pt Electrode as Hydrogen Evolution Sites

〇(B)Tatsuro Endo1, Soraya Shizumi1, Tsutomu Minegishi2, Masakazu Sugiyama1,2 (1.Univ. Tokyo., 2.RCAST, Univ.Tokyo.)

Keywords:GaN, Photocatalyst, Hydrogen

When adopting wide-gap semiconductor as photocatalyst for water splitting, its ability can be enhanced by modifying surface with cocatalyst. However, many are still unknown about the mechanism of carrier transport while reaction. In this study we deposited Pt on the surface of GaN, and measured the amount of Hydrogen produced, as well as the potential of GaN and Pt. The outcome showed that with Pt on surface of GaN, it can greatly improve the Hydrogen production. The potential of GaN was -0.1 V vs RHE, and the potential of Pt followed GaN throughout photochemical reaction.