Mg concentration dependence of low Al composition polarized doped p-type AlGaN cladding layers on UV-B LD

Kazuki Yamada; Tomoya Omori; Shunya Tanaka; Yuya Ogino; Kosuke Sato; Sho Iwayama; Hideto Miyake; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16p-Z27-1~15] 15.4 III-V-group nitride crystals

Tue. Mar 16, 2021 1:00 PM - 5:15 PM Z27 (Z27)

Motoaki Iwaya(Meijo Univ.), Ryuji Katayama(Osaka Univ.), Tomoyuki Tanikawa(Osaka Univ.)

1:15 PM - 1:30 PM

△ [16p-Z27-2] Mg concentration dependence of low Al composition polarized doped p-type AlGaN cladding layers on UV-B LD

〇(M1)Kazuki Yamada¹, Tomoya Omori¹, Shunya Tanaka¹, Yuya Ogino¹, Kosuke Sato^1,2, Sho Iwayama^1,3, Hideto Miyake³, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,4 (1.Meijo Univ., 2.Asahi-Kasei, 3.Mie Univ., 4.Akasaki Res. Cen., Nagoya Univ.)

Keywords:semiconductor, UV-B, AlGaN