[16p-Z27-1~15] 15.4 III-V-group nitride crystals

[16p-Z27-7] Discrete AlN Mole Fraction Observed in AlGaN Layer with Dense Macrosteps (2)

〇Yosuke Nagasawa¹, Akira Hirano¹, Masamichi Ippommatsu¹, Hideki Sako², Ai Hashimoto², Ryuichi Sugie², Yoshio Honda³, Hiroshi Amano³, Isamu Akasaki⁴, Kazunobu Kojima⁵, Shigefusa Chichibu⁵ (1.UV Craftory Co. Ltd., 2.Toray Research Center Inc., 3.Nagoya Univ. IMaSS, 4.Meijo Univ., 5.Tohoku Univ. IMRAM)

Keywords:AlGaN, DUV, LED

AlN mole fraction of ~20-nm-wide Ga-rich zones generated in the Al_aGa_1-aN (a=0.63, 0.55, and 0.43) on an AlN with macrosteps grown a ~1° miscut c(0001) sapphire with respect to m[1-100] axis was determined by using energy dispersed X-ray spectroscopy calibrated by Rutherford backscattering. The analysis applied in this work is reported in the previous presentation to have enough spatial resolution and accuracy in determining the AlGaN compositions of the zones. Al_yGa_1-yN (y~n/12; n=7, 6, 5) were respectively observed in Ga-rich zones in Al_aGa_1-aN (a~0.63, 0.55, and 0.43). The structural analysis implied the possibility of an ordering configuration with a small number of atomic layers stuck in the c[ooo1] direction.