[16p-Z31-1~18] 17.2 Graphene

[16p-Z31-18] Selective etching of h-BN using high-pressure CF₄ plasma to fabricate graphene devices

〇Yuta Seo¹, Satoru Masbuchi¹, Eisuke Watanabe¹, Momoko Onodera¹, Rai Moriya¹, Kenji Watanabe², Takashi Taniguchi^1,2, Tomoki Machida^1,3 (1.IIS Univ. Tokyo, 2.NIMS, 3.CREST-JST)

Keywords:graphene, h-BN, etching

We achieved the high etch selectivity of h-BN against graphene (> 1000) in CF₄ plasma etching at ICP-RIE system by increasing the plasma pressure (P = 10 Pa). When we etch graphene/h-BN structures using this method, graphene acts as an etch stop to protect the underlying h-BN, so we realize graphene devices with higher flexibility of their geometry, such as the graphene device in which one-dimensional contacts are made to graphene above the graphite backgate.