[17a-Z15-1~7] 6.2 Carbon-based thin films

[17a-Z15-6] Improvement of Semiconductor Properties of Si-added Amorphous Carbon Thin Films by Controlling Carrier Density and Mobility for High-efficiency Multi-junction Solar Cells

〇Bunta Kondo¹, Hiroshi Naragino¹, Kensuke Honda¹ (1.Yamaguchi Univ.)

Keywords:semiconductor, carbon thin films, amorphous

In order to achieve a large-scale diffusion of high-efficiency solar cells, it is effective to fabricate multi-junction cells using Si-doped amorphous carbon (a-SiC) semiconductor thin films with a controllable optical gap in the range of 1.25-2.76 eV. In this study, the carrier density and mobility of n-type a-SiC thin films were simultaneously improved by phosphorus doping and microcrystallization of the films in order to increase the efficiency of n-type a-SiC/p-Si heterojunction solar cells as the first step of the research.